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DMP21D5UFB4
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±8
Units
V
V
Continuous Drain Current (Note 6) V GS = -4.5V
Continuous Drain Current (Note 6) V GS = -1.8V
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
Steady
State
t<10s
Steady
State
t<10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I DM
I S
-700
-600
-850
-670
-500
-400
-600
-550
-2
-800
mA
mA
mA
mA
A
mA
Thermal Characteristics @T A = 25°C unless otherwise specified
Total Power Dissipation (Note 5)
Characteristic
Symbol
P D
Value
0.46
Units
W
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
R θ JA
P D
R θ JA
T J, T STG
279
210
0.95
134
100
-55 to +150
°C/W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
-
-
-
-
-
-
-
-
-100
±1.0
±5.0
V
nA
μ A
V GS = 0V, I D = -1mA
V DS = -20V, V GS = 0V
V GS = ±5V, V DS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-0.5
-
-1.0
V
V DS = V GS , I D = -250 μ A
-
0.67
0.7
0.97
1.0
V GS = -5V, I D = -100mA
V GS = -4.5V, I D = -100mA
Static Drain-Source On-Resistance
R DS (ON)
-
-
0.9
1.2
1.5
2.0
Ω
V GS = -2.5V, I D = -80mA
V GS = -1.8V, I D = -40mA
-
-
1.5
5
3.0
-
V GS = -1.5V, I D = -30mA
V GS = -1.2V, I D = -1mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
-
-
0.7
-0.75
-
-1.2
S
V
V DS = -3V, I D = -100mA
V GS = 0V, I S = -330mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V GS = -4.5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
46.1
7.2
4.9
14.3
0.5
0.09
0.09
8.5
4.3
20.2
19.2
-
-
-
-
-
-
-
-
-
-
-
pF
Ω
nC
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = -10V, I D = -250mA
V DD = -3V, V GS = -2.5V,
R L = 300 ? , R G = 25 ? ,
I D = -100mA
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP21D5UFB4
Document number: DS35284 Rev. 5 - 2
2 of 6
www.diodes.com
May 2012
? Diodes Incorporated
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